STC.UNM v. Intel Corporation
Filing
113
BRIEF - STC'S INITIAL CLAIM CONSTRUCTION BRIEF by STC. UNM (Attachments: # 1 Exhibit 1 - (Part 1) Annotated '998 Patent, # 2 Exhibit 1 - (Part 2) Annotated '998 Patent, # 3 Exhibit 1 - (Part 3) Annotated '998 Patent, # 4 Exhibit 1 - (Part 4) Annotated '998 Patent, # 5 Exhibit 2 - (Part 1) Declaration of Dr. Chris Mack, # 6 Exhibit 2 - (Part 2) Declaration of Dr. Chris Mack)(Pedersen, Steven)
Exhibit A
Dr. Chris Mack Curriculum Vitae
Chris A. Mack
1605 Watchhill Road, Austin, Texas 78703
Voice: 512-814-6225, email: chris@lithoguru.com
EDUCATION
University of Texas, Austin, TX
Doctorate in Chemical Engineering
Thesis Title: “Modeling Solvent Effects in Optical Lithography”
University of Maryland, College Park, MD
Master of Science in Electrical Engineering
Rose-Hulman Institute of Technology, Terre Haute, IN
Bachelor of Science degrees in Physics, Electrical
Engineering, Chemistry, and Chemical Engineering
December 1998
December 1989
May 1982
EXPERIENCE
Lithoguru.com, Austin, TX
11/05 – present
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Gentleman Scientist
Pursuing intellectual interests, research, writing, and teaching, as reflected on the
website www.lithoguru.com.
Current major research interest: developing an approximate analytical stochastic
model of lithography line-edge roughness.
Consulting in the fields of optics and semiconductor lithography, including legal
expert witness services and business consultation.
University of Texas at Austin, Austin, TX
8/91 – present
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Adjunct Faculty (part time)
Teaching graduate and undergraduate courses in the Electrical Engineering and
Chemical Engineering departments. Graduate courses include Semiconductor
Microlithography, Chemical Processes for Microelectronics, and Fourier Optics.
Undergraduate courses include Electronic Circuits, Solid State Electronics, and
Modern Optics. Served on the committees of numerous PhD dissertations.
Teaching loads have varied but have averaged 1 – 2 courses per semester.
University of Notre Dame, South Bend, IN
8/06 – 12/06
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Melchor Visiting Chair Professor
Teaching two graduate courses in the Electrical Engineering department:
Semiconductor Microlithography, and Data Analysis and Modeling in the Real
World.
KLA-Tencor, Austin, TX
2/00 – 11/05
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Vice President of Lithography Technology
Provided strategic vision in all lithography related products for KLA-Tencor, a $2B
Fortune 500 supplier of equipment to the semiconductor industry.
Directed research efforts for four product divisions across two continents, including
lithography simulation, optical and SEM critical dimension metrology, and optical
overlay metrology. Obtained funding and managed resource allocation and strategic
planning for critical long-term projects.
Provided and oversaw successful turn-around strategies for two failing product lines.
Provided internal consulting services in lithography to other KLA-Tencor divisions.
Oversaw the acquisition of FINLE Technologies by KLA-Tencor and its transition to
a successful product division.
FINLE Technologies, Austin, TX
2/90 – 2/00
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CEO, President and Chief Technical Officer
Founded company in 1990, pursuing it full time by the end of 1991.
Responsible for overall corporate management, vision, strategic planning, technical
direction, budgeting, new product development, and lithography research. Grew the
company from one person and $60,000 in revenue in 1990 to 25 people and $2.5M in
revenue in 2000.
Developed the industry standard PROLITH Toolkit of lithography simulation
software and the ProDATA suite of data analysis software.
Provided consulting services to the semiconductor industry.
Taught numerous short courses on optical lithography.
SEMATECH, Austin, TX
8/90 – 12/91
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Lithography Engineer
As an assignee of the department of defense to SEMATECH, provided lithography
expertise to SEMATECH on a variety of different projects, including modeling and
process development for deep-UV resist systems, processes optimization of the i-line
production process, advanced development activities in phase-shifting mask
technologies, and lithographic lens design.
Taught short-term and long-term courses on lithography to SEMATECH staff and
assignees.
National Security Agency, Fort Meade, MD
11/82 – 8/90
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Senior Engineer - Lithography
As a member of the Microelectronics Research Laboratory (MRL), was tasked with
performing research for present and future agency needs in the area of
microlithography for semiconductor processing. This work provided a unique blend
of theoretical research (e.g., a mechanism for the development reaction, diffraction
theory for proximity printing and aerial imaging) and experimental work
(measurement of resist properties, model verification). Performed numerous
practical and theoretical studies, e.g., resist coating uniformity on wafer tracks, mask
bias effects for step-and-repeat printing, exposure optimization, image reversal
techniques, and focus effects for submicron lithography. The results of this work
have been published in numerous journals and presented at technical conferences,
including invited papers at international conferences in Japan and Europe.
COURSES TAUGHT AT THE UNIVERSITY OF TEXAS AT AUSTIN
EE 411
EE 323
EE 325
EE 338
EE 339
CHE 323
PHY 333/EE 347
SSC306
EE 383P
EE 396K/CHE 385C
CHE 395C
SSC380D
Circuit Theory (undergraduate)
Network Theory II (undergraduate)
Electromagnetic Engineering (undergraduate)
Electronic Circuits I (undergraduate)
Solid State Electronics (undergraduate)
Chemical Engineering for Microelectronics (undergraduate)
Modern Optics (undergraduate)
Statistics in Market Analysis (undergraduate)
Fourier Optics (graduate)
Semiconductor Microlithography (graduate)
Chemical Processes for Microelectronics (graduate)
Statistical Methods II (graduate)
COURSES TAUGHT AT THE UNIVERSITY OF NOTRE DAME
EE 60598
EE 60596
Semiconductor Microlithography (graduate)
Data Analysis and Modeling in the Real World (graduate)
AWARDS
SPIE Frits Zernike Award for Microlithography, for contributions in lithography modeling and
education, 2009
SEMI Award for North America, for contributions in lithography modeling and education, 2003
Best Paper Award, 18th Annual BACUS Symposium on Photomask Technology and
Management, 1998.
INDUSTRIAL AND PROFESSIONAL SOCIETIES
Member of the Board of Trustees, Rose-Hulman Institute of Technology, 2008 – present
Member of the Board of Advisors to the Physics Department, Rose-Hulman Institute of
Technology, 2000 – 2008
Member of the Board of Advisors to the Chemistry Department, Rose-Hulman Institute of
Technology, 2003 – 2008
Member of the Board of Advisors to the MEMS Laboratory, Rose-Hulman Institute of
Technology, 2004 – 2008
Fellow of SPIE
Fellow of IEEE
Member of the Optical Society of America
Chairman of the Lithography Technical Working Group of the Optical Society of America, 1992
– 1996.
Conference Chair, Microlithographic Techniques in IC Fabrication, SPIE Conference, 1997 and
2000, Singapore
Conference Chair, Lithography for Semiconductor Manufacturing, SPIE Conference, 1999 and
2001, Edinburgh, Scotland
Conference Chair, Advanced Microlithography Technology, SPIE Conference, 2007, Beijing,
China
Plenary Speaker, SPIE 2003 Symposium on Microlithography.
Member of the Board of Advisors to Semiconductor International magazine, 1993 – 2004
Associate Editor, Journal of Microlithography, Microfabrication, and Microsystems (JM3), 2002
– present
Member of the Board of Advisors to Microlithography World magazine, 2003 – 2008
Contributing Columnist for Microlithography World magazine, 1993 – 2008
OTHER PROFESSIONAL EXPERIENCE
Expert witness consulting in the field of lithography and semiconductor design and
manufacturing
PUBLICATIONS
Books
Chris A. Mack, Fundamental Principles of Optical Lithography: The Science of Microfabrication,
John Wiley & Sons (in press, to be published November, 2007)
Chris A. Mack, Field Guide to Optical Lithography, SPIE Field Guide Series Vol. FG06,
(Bellingham, WA: 2006). Also available in Japanese.
C. A. Mack, Inside PROLITH: A Comprehensive Guide to Optical Lithography Simulation,
FINLE Technologies (Austin, TX: 1997). – Out of Print.
Book Chapters
C.A. Mack, “Microlithography”, Chapter 9, Semiconductor Manufacturing Handbook, Hwaiyu
Geng, Ed., McGraw Hill (New York: 2005).
Contributed “Microlithography” entry for the McGraw Hill Encyclopedia of Science &
Technology, 9th Edition (2005).
Contributed lithography terms for: Comprehensive Dictionary of Electrical Engineering, Phillip
A. Laplante, Ed., (CRC Press and IEEE Press, 1999).
C.A. Mack, “Optical Lithography Modeling,” Chapter 2, Microlithography Science and
Technology, J. R. Sheats and B. W. Smith, editors, Marcel Dekker (New York: 1998) pp. 109170.
C.A. Mack and A. R. Neureuther, “Optical Lithography Modeling,” Chapter 7, Handbook of
Microlithography, Micromachining, and Microfabrication, Volume 1: Microlithography, P. RaiChoudhury, editor, SPIE Press (Bellingham, WA: 1997) pp. 597-680.
R. Hershel and C. A. Mack, “Lumped Parameter Model for Optical Lithography,” Chapter 2,
Lithography for VLSI, VLSI Electronics - Microstructure Science Volume 16, R. K. Watts and N.
G. Einspruch, eds., Academic Press (New York:1987) pp. 19-55.
Conference Chair/Proceedings Editor
Quantum Optics, Optical Data Storage, and Advanced Microlithography, Proceedings of SPIE
Volume 6827 (2007)
Editors: Guangcan Guo; Songhao Liu; Guofan Jin; Kees A. Schouhamer Immink; Keiji Shono;
Chris A. Mack; Jinfeng Kang; Jun-en Yao
Lithography for Semiconductor Manufacturing II, Proceedings of SPIE Volume 4404 (2001)
Editors: Chris A. Mack; Tom Stevenson
Microlithographic Techniques in Integrated Circuit Fabrication II, Proceedings of SPIE Volume
4226 (2000)
Editors: Chris A. Mack; XiaoCong Yuan
Lithography for Semiconductor Manufacturing, Proceedings of SPIE Volume 3741 (1999)
Editors: Chris A. Mack; Tom Stevenson
Microlithographic Techniques in IC Fabrication, Proceedings of SPIE Volume 3183 (1997)
Editors: Soon Fatt Yoon; Raymond Yu; Chris A. Mack
Patents
U.S. Patent 5,363,171, Photolithography exposure tool and method for in situ photoresist
measurements and exposure control, November 8, 1994
U.S. Patent 6,968,253, Computer-implemented method and carrier medium configured to
generate a set of process parameters for a lithography process, November 22, 2005
U.S. Patent 7,075,639, Method and Mark for Metrology of Phase Errors on Phase Shift Masks,
July 11, 2006
U.S. Patent 7,142,941, Computer-implemented Method and Carrier Medium Configures to
Generate a Set of Process Parameters and/or a List of Potential Causes of Deviations for a
Lithography Process, November 28, 2006.
U.S. Patent 7,297,453, Systems and Methods for Mitigating Variances on a Patterned Wafer
Using a Prediction Model, November 20, 2007.
U.S. Patent 7,300,725, Method for Determining and Correcting Reticle Variations, November
27, 2007.
U.S. Patent 7,300,729, Method for Monitoring a Reticle, November 27, 2007.
U.S. Patent 7,303,842, Systems and Methods for Modifying a Reticle’s Optical Properties,
December 4, 2007.
U.S. Patent 7,352,453, Method for Process Optimization and Control by Comparison Between 2
or More Measured Scatterometry Signals, April 1, 2008.
U.S. Patent 7,368,208, Measuring Phase Errors on Phase Shift Masks, May 6, 2008.
U.S. Patent 7,382,447, Method for Determining Lithographic Focus and Exposure, June 3,
2008.
U.S. Patent 7,528,953, Target Acquisition and Overlay Metrology Based on Two Diffracted
Orders Imaging, May 5, 2009.
U.S. Patent 7,566,517, Feature Printability Optimization by Optical Tool, July 28, 2009.
U.S. Patent 7,804,998, Overlay Metrology and Control Method, September 28, 2010.
Refereed Papers
1.
C. A. Mack, “Analytical Expression for the Standing Wave Intensity in Photoresist”,
Applied Optics, Vol. 25, No. 12 (15 June 1986) pp. 1958-1961.
2.
C. A. Mack, “Development of Positive Photoresists,” Journal of the Electrochemical
Society, Vol. 134, No. 1 (Jan. 1987) pp. 148-152.
3.
C. A. Mack, “Contrast Enhancement Techniques for Submicron Optical Lithography,”
Journal of Vacuum Science & Technology, Vol. A5, No. 4 (Jul./Aug. 1987) pp. 1428-1431.
4.
C. A. Mack, “Dispelling the Myths about Dyed Photoresist,” Solid State Technology, Vol.
31, No. 1 (Jan. 1988) pp. 125-130.
5.
C. A. Mack, “Absorption and Exposure in Positive Photoresist,” Applied Optics, Vol. 27,
No. 23 (1 Dec. 1988) pp. 4913-4919.
6.
C. A. Mack and P. M. Kaufman, “Mask Bias in Submicron Optical Lithography,” Journal of
Vacuum Science & Technology, Vol. B6, No. 6 (Nov./Dec. 1988) pp. 2213-2220.
7.
C. A. Mack, “Understanding Focus Effects in Submicron Optical Lithography”, Optical
Engineering, Vol. 27, No. 12 (1 Dec 1988) pp. 1093-1100.
8.
C. A. Mack, “Lithographic Optimization Using Photoresist Contrast,” Microelectronics
Manufacturing Technology, Vol. 14, No. 1 (Jan. 1991) pp. 36-42.
9.
D. H. Ziger and C. A. Mack, “Generalized Approach toward Modeling Resist
Performance,” AICHE Journal, Vol. 37, No. 12 (Dec 1991) pp. 1863-1874.
10.
C. A. Mack, E. Capsuto, S. Sethi, and J. Witowski, “Modeling and Characterization of a
0.5µm Deep Ultraviolet Process,” Journal of Vacuum Science & Technology, Vol. B 9, No.
6 (Nov / Dec 1991) pp. 3143-3149.
11.
D. Ziger, C. A. Mack, and R. Distasio, “Generalized Characteristic Model for Lithography:
Application to Negative Chemically Amplified Resists,” Optical Engineering, Vol. 31, No. 1
(1 Jan 1992) pp.98-104.
12.
C. A. Mack and J. E. Connors, “Fundamental Differences Between Positive and Negative
Tone Imaging,” Microlithography World, Vol. 1, No. 3 (Jul/Aug 1992) pp. 17-22.
13.
D. W. Johnson and C. A. Mack, Modeling the Continuing Realm of Optical Lithography”
Semiconductor International, Vol. 15, No. 6 (June 1992) pp. 134-139.
14.
C. A. Mack, “New Kinetic Model for Resist Dissolution,” Journal of the Electrochemical
Society, Vol. 139, No. 4 (Apr. 1992) pp. L35-L37.
15.
C. A. Mack, “Understanding Focus Effects in Submicrometer Optical Lithography: a
Review,” Optical Engineering, Vol. 32, No. 10 (Oct. 1993) pp. 2350-2362.
16.
E. W. Charrier, C. J. Progler and C. A. Mack, “Comparison of Simulated and Experimental
CD-Limited Yield for a Submicron I-Line Process,” Solid State Technology, Vol. 38, No. 11
(Nov. 1995) pp. 105-112.
17.
C. A. Mack, “Lithographic Effects of Acid Diffusion in Chemically Amplified Resists,”
Microelectronics Technology: Polymers for Advanced Imaging and Packaging, ACS
Symposium Series 614, E. Reichmanis, C. Ober, S. MacDonald, T. Iwayanagi, and T.
Nishikubo, eds., ACS Press (Washington: 1995) pp. 56-68.
18.
C. A. Mack, “Evaluating Proximity Effects Using 3-D Optical Lithography Simulation,”
Semiconductor International (July, 1996) pp. 237-242.
19.
C. A. Mack, “Trends in Optical Lithography,” Optics and Photonics News (April, 1996) pp.
29-33.
20.
C. A. Mack, G. E. Flores, W. W. Flack, and E. Tai, “Lithographic Modeling Speeds ThinFilm-Head Development,” Data Storage (May/June, 1996) pp. 55-58.
21.
C. A. Mack, “Reducing Proximity Effects in Optical Lithography,” Japanese Journal of
Applied Physics, Vol. 35 (1996) pp. 6379-6385.
22.
C. A. Mack and G. Arthur, “Notch Model for Photoresist Dissolution,” Electrochemical and
Solid State Letters, Vol. 1, No. 2, (August, 1998) pp. 86-87.
23.
C. A. Mack, K. E. Mueller, A. B. Gardiner, J. P. Sagan, R. R. Dammel, and C. G. Willson
“Modeling Solvent Diffusion in Photoresist,” Journal of Vacuum Science & Technology,
Vol. B16, No. 6, (Nov., 1998) pp. 3779-3783.
24.
C. A. Mack, D. A. Legband, S. Jug, “Data Analysis for Photolithography” MicroElectronic
Engineering, Vol. 46, Issues 1-4 (May 1999) pp. 65-68.
25.
C. A. Mack, “Electron Beam Lithography Simulation for Mask Making” MicroElectronic
Engineering, Vol. 46, Issues 1-4 (May 1999) pp. 283-286.
26.
Sergey Babin, Igor Yu. Kuzmin and Chris A. Mack, “Comprehensive Simulation of
Electron-beam Lithography Processes Using PROLITH 3/D and TEMPTATION Software
Tools,” MicroElectronic Engineering, Volumes 57-58 (September 2001) pp. 343-348.
27.
J. Byers, C. Mack, R. Huang, S. Jug, “Automatic Calibration of Lithography Simulation
Parameters Using Multiple Data Sets,” MicroElectronic Engineering, Volumes 61-62 (July
2002) pp. 89-95.
28.
Chris A. Mack, “Charting the Future (and Remembering the Past) of Optical Lithography
Simulation,” Journal of Vacuum Science & Technology, Vol. B 23, No. 6 (Nov / Dec 2005)
pp. 2601-2606.
29.
C. A. Mack, "Accuracy, speed, new physical phenomena: The future of litho simulation,"
Solid State Technology, February, 2006.
30.
C. A. Mack, “The Future of Semiconductor Lithography: After Optical, What Next?”,
Future Fab International, Vol. 23 (7/9/2007).
31.
Chris A. Mack, “Fab Future”, SPIE Professional (Oct. 2008) pp. 10-11.
32.
Chris A. Mack, “Seeing Double”, IEEE Spectrum (Nov. 2008) pp. 46-51.
33.
C. Mack, “Stochastic approach to modeling photoresist development”, Journal of Vacuum
Science & Technology, Vol. B27, No. 3 (May/Jun. 2009) pp. 1122-1128.
34.
C. A. Mack, “Stochastic Modeling in Lithography: Autocorrelation Behavior of Catalytic
Reaction-Diffusion Systems,” Journal of Micro/Nanolithography, MEMS, and MOEMS,
Vol. 8, No. 2 (Apr/May/Jun 2009) p. 029701.
35.
C. A. Mack, “Stochastic Modeling in Lithography: The Use of Dynamical Scaling in
Photoresist Development,” Journal of Micro/Nanolithography, MEMS, and MOEMS, Vol.
8, No. 3 (Jul/Aug/Sep 2009) p. 033001.
36.
Chris Mack, “A Simple Model of Line-Edge Roughness”, Future Fab International, Vol. 34
(July 14, 2010).
37.
C. A. Mack, “Stochastic modeling of photoresist development in two and three
dimensions”, Journal of Micro/Nanolithography, MEMS, and MOEMS , Vol. 9, No. 4 (OctDec, 2010) p. 041202.
Invited Papers
1.
C. A. Mack, “Lithographic Simulation: A Review,” Lithographic and Micromachining
Techniques for Optical Component Fabrication, Proc., SPIE Vol. 4440 (2001) pp. 59-72.
2.
Chris A. Mack, “The End of the Semiconductor Industry as We Know It,” Optical
Microlithography XVI, Plenary Address, SPIE Vol. 5040 (2003) pp. xxi-xxxi.
3.
C. A. Mack, “The New, New Limits of Optical Lithography,” Emerging Lithographic
Technologies VIII, Proc., SPIE Vol. 5374 (2004) pp. 1-8.
4.
Chris A. Mack, “Thirty Years of Lithography Simulation,” Optical Microlithography XVIII,
Proc., SPIE Vol. 5754-1 (2005), pp. 1-12.
5.
C. A. Mack, “What's So Hard About Lithography?,” presented at the ICMTS (March, 2006),
available at http://www.lithoguru.com/scientist/papers_recent.html.
Contributed Papers
1.
C. A. Mack, “PROLITH: A Comprehensive Optical Lithography Model,” Optical
Microlithography IV, Proc., SPIE Vol. 538 (1985) pp. 207-220.
2.
C. A. Mack and R. T. Carback, “Modeling the Effects of Prebake on Positive Resist
Processing,” Kodak Microelectronics Seminar, Interface ’85, Proc., (1985) pp. 155-158.
3.
C. A. Mack, “Advanced Topics in Lithography Modeling,” Advances in Resist Technology
and Processing III, Proc., SPIE Vol. 631 (1986) pp. 276-285.
4.
C. A. Mack, A. Stephanakis, R. Hershel, “Lumped Parameter Model of the
Photolithographic Process,” Kodak Microelectronics Seminar, Interface ’86, Proc., (1986)
pp. 228-238.
5.
C. A. Mack, “Photoresist Process Optimization,” KTI Microelectronics Seminar, Interface
’87, Proc., (1987) pp. 153-167.
6.
T. Brown and C. A. Mack, “Comparison of Modeling and Experimental Results in Contrast
Enhancement Lithography,” Advances in Resist Technology and Processing V, Proc., SPIE
Vol. 920 (1988) pp. 390-403.
7.
C. A. Mack, “Understanding Focus Effects in Submicron Optical Lithography,”
Optical/Laser Microlithography, Proc., SPIE Vol. 922 (1988) pp. 135-148.
8.
D. H. Ziger and C. A. Mack, “Lithographic Characterization of a Rapid Ammonia Catalyzed
Image Reversal Process,” KTI Microelectronics Seminar, Interface ’88, Proc., (1988) pp.
165-175.
9.
C. A. Mack and P. M. Kaufman, “Understanding Focus Effects in Submicron Optical
Lithography, part 2: Photoresist effects,” Optical/Laser Microlithography II, Proc., SPIE Vol.
1088 (1989) pp. 304-323.
10. C. A. Mack and P. M. Kaufman, “Focus Effects in Submicron Optical Lithography, Optical
and Photoresist Effects,” The International Congress on Optical Science & Engineering,
Proc., Paris, France, SPIE Vol. 1138 (1989) pp. 88-105.
11. C. A. Mack, “Optimum Stepper Performance Through Image Manipulation,” KTI
Microelectronics Seminar, Interface ’89, Proc., (1989) pp. 209-215.
12. C. A. Mack, “Algorithm for Optimizing Stepper Performance Through Image Manipulation,”
Optical/Laser Microlithography III, Proc., SPIE Vol. 1264 (1990) pp. 71-82.
13. C. A. Mack, “Lithographic Optimization Using Photoresist Contrast,” KTI Microlithography
Seminar, Interface ’90, Proc., (1990) pp. 1-12.
14. P. Trefonas and C. A. Mack, “Exposure Dose Optimization for a Positive Resist Containing
Poly-functional Photoactive Compound,” Advances in Resist Technology and Processing
VIII, Proc., SPIE Vol. 1466 (1991) pp. 117-131.
15. D. Ziger, C. A. Mack, and R. Distasio, “The Generalized Characteristic Model for
Lithography: Application to Negative Chemically Amplified Resists,” Advances in Resist
Technology and Processing VIII, Proc., SPIE Vol. 1466 (1991) pp. 270-282.
16. C. A. Mack, “Fundamental Issues in Phase-Shifting Mask Technology,” KTI
Microlithography Seminar, Interface ’91, Proc., (1991) pp. 23-35.
17. M. A. Toukhy, S. G. Hansen, R. J. Hurditch, and C. A. Mack, “Experimental Investigation of
a Novel Dissolution Model,” Advances in Resist Technology and Processing IX, Proc.,
SPIE Vol. 1672 (1992) pp. 286-296.
18. C. A. Mack, “Understanding Focus Effects in Submicron Optical Lithography, part 3:
Methods for Depth-of-Focus Improvement,” Optical/Laser Microlithography V, Proc., SPIE
Vol. 1674 (1992) pp. 272-284.
19. C. A. Mack and J. E. Connors, “Fundamental Differences Between Positive and Negative
Tone Imaging,” Optical/Laser Microlithography V, Proc., SPIE Vol. 1674 (1992) pp. 328338.
20. D. W. Johnson and C. A. Mack, “I-line, DUV, VUV, or X-Ray?” Optical/Laser
Microlithography V, Proc., SPIE Vol. 1674 (1992) pp. 486-498.
21. C. A. Mack, “Simple Method for Rim Shifter Design: The Biased Self-Aligned Rim Shifter,”
12th Annual BACUS Symposium, Proc., SPIE Vol. 1809 (1992) pp. 229-236.
22. N. Thane, C. A. Mack, and S. Sethi, “Lithographic Effects of Metal Reflectivity Variations,”
Integrated Circuit Metrology, Inspection, and Process Control VII, Proc., SPIE Vol. 1926
(1993) pp. 483-494.
23. C. A. Mack, “Phase Contrast Lithography,” Optical/Laser Microlithography VI, Proc., SPIE
Vol. 1927 (1993) pp. 512-520.
24. C. A. Mack, “Optimization of the Spatial Properties of Illumination,” Optical/Laser
Microlithography VI, Proc., SPIE Vol. 1927 (1993) pp. 125-136.
25. P. M. Mahoney and C. A. Mack, “Cost Analysis of Lithographic Characterization: An
Overview,” Optical/Laser Microlithography VI, Proc., SPIE Vol.1927 (1993) pp. 827-832.
26. C. A. Mack, “Designing the Ultimate Photoresist,” OCG Microlithography Seminar,
Interface ’93, Proc., (1993) pp. 175-191.
27. G. E. Flores, W. W. Flack, E. Tai, and C. A. Mack, “Lithographic Performance in Thick
Photoresist Applications,” OCG Microlithography Seminar, Interface ’93, Proc., (1993) pp.
41-60.
28. C. A. Mack, D. P. DeWitt, B. K. Tsai, and G. Yetter, “Modeling of Solvent Evaporation
Effects for Hot Plate Baking of Photoresist,” Advances in Resist Technology and
Processing XI, Proc., SPIE Vol. 2195 (1994) pp. 584-595.
29. D. P. DeWitt, T. C. Niemoeller, C. A. Mack, and G. Yetter, “Thermal Design Methodology
of Hot and Chill Plates for Photolithography,” Integrated Circuit Metrology, Inspection, and
Process Control VIII, Proc., SPIE Vol. 2196 (1994) pp. 432-448.
30. C. A. Mack, “Enhanced Lumped Parameter Model for Photolithography,” Optical/Laser
Microlithography VII, Proc., SPIE Vol. 2197 (1994) pp. 501-510.
31. C. A. Mack and E. W. Charrier, “Yield Modeling for Photolithography,” OCG
Microlithography Seminar, Interface ’94, Proc., (1994) pp. 171-182.
32. J. S. Petersen, C. A. Mack, J. W. Thackeray, R. Sinta, T. H. Fedynyshyn, J. M. Mori, J. D.
Myers and D. A. Miller, “Characterization and Modeling of a Positive Acting Chemically
Amplified Resist,” Advances in Resist Technology and Processing XII, Proc., SPIE Vol.
2438 (1995) pp. 153-166.
33. J. S. Petersen, C. A. Mack, J. Sturtevant, J. D. Byers and D. A. Miller, “Non-constant
Diffusion Coefficients: Short Description of Modeling and Comparison to Experimental
Results,” Advances in Resist Technology and Processing XII, Proc., SPIE Vol. 2438 (1995)
pp. 167-180.
34. E. W. Charrier and C. A. Mack, “Yield Modeling and Enhancement for Optical Lithography,”
Optical/Laser Microlithography VIII, Proc., SPIE Vol. 2440 (1995) pp. 435-447.
35. C. A. Mack, “Focus Effects in Submicron Optical Lithography, Part 4: Metrics for Depth of
Focus,” Optical/Laser Microlithography VIII, Proc., SPIE Vol. 2440 (1995) pp. 458-471.
36. C. A. Mack and C-B. Juang, “Comparison of Scalar and Vector Modeling of Image
Formation in Photoresist,” Optical/Laser Microlithography VIII, Proc., SPIE Vol. 2440
(1995) pp. 381-394.
37. E. W. Charrier, C. J. Progler and C. A. Mack, “Comparison of Simulated and Experimental
CD-Limited Yield for a Submicron I-Line Process,” Microelectronic Manufacturing Yield,
Reliability, and Failure Analysis, Proc., SPIE Vol. 2635 (1995) pp. 84-94.
38. C. A. Mack, “Lithographic Effects of Acid Diffusion in Chemically Amplified Resists,” OCG
Microlithography Seminar Interface ‘95, Proc., (1995) pp. 217-228.
39. C. A. Mack, T. Matsuzawa, A. Sekiguchi, Y. Minami, “Resist Metrology for Lithography
Simulation, Part 1: Exposure Parameter Measurements,” Metrology, Inspection, and
Process Control for Microlithography X, Proc., SPIE Vol. 2725 (1996) pp. 34-48.
40. A. Sekiguchi, C. A. Mack, Y. Minami, T. Matsuzawa, “Resist Metrology for Lithography
Simulation, Part 2: Development Parameter Measurements,” Metrology, Inspection, and
Process Control for Microlithography X, Proc., SPIE Vol. 2725 (1996) pp. 49-63.
41. S. H. Thornton and C. A. Mack, “Lithography Model Tuning: Matching Simulation to
Experiment,” Optical Microlithography IX, Proc., SPIE Vol. 2726 (1996) pp. 223-235.
42. C. A. Mack, “Evaluation of Proximity Effects Using Three-Dimensional Optical Lithography
Simulation,” Optical Microlithography IX, Proc., SPIE Vol. 2726 (1996) pp. 634-639.
43. C. A. Mack, “Reducing Proximity Effects in Optical Lithography,” Olin Microlithography
Seminar Interface ‘96, Proc., (1996) pp. 325-336.
44. C. A. Mack, “Three-Dimensional Electron Beam Lithography Simulation,” Emerging
Lithographic Technologies, Proc., SPIE Vol. 3048 (1997) pp. 76-88.
45. G. Arthur, C. A. Mack, B. Martin, “Enhancing the Development Rate Model For Optimum
Simulation Capability in the Sub-Half-Micron Regime,” Advances in Resist Technology and
Processing XIV, Proc., SPIE Vol. 3049 (1997) pp. 189-200.
46. C.A. Mack, K.E. Mueller, A.B. Gardiner, A. Qiu, R.R. Dammel, W.G. Koros, C.G. Willson,
“Diffusivity Measurements in Polymers, Part 1: Lithographic Modeling Results,” Advances
in Resist Technology and Processing XIV, Proc., SPIE Vol. 3049 (1997) pp. 355-362.
47. Allen B. Gardiner, Anwei Qin, Clifford L. Henderson, William J. Koros, C. Grant Willson,
Ralph R. Dammel, Chris Mack, William D. Hinsberg, “Diffusivity Measurements in
Polymers, Part 2: Residual Casting Solvent Measurement by Liquid Scintillation Counting,”
Advances in Resist Technology and Processing XIV, Proc., SPIE Vol. 3049 (1997) pp. 850860.
48. Katherine E. Mueller, William J. Koros, Chris A. Mack, C.G. Willson, “Diffusivity
Measurements in Polymers, Part 4: Acid Diffusion in Chemically Amplified Resists,”
Advances in Resist Technology and Processing XIV, Proc., SPIE Vol. 3049 (1997) pp. 706711.
49. Edward Charrier, Chris A. Mack, Q. Zuo, M. Maslow, “Methodology for Utilizing CD
Distributions for Optimization of Lithographic Processes,” Optical Microlithography X, Proc.,
SPIE Vol. 3051 (1997) pp. 541-551.
50. Mark E. Mason, Robert A. Soper, R. Mark Terry, and C. A. Mack, “Process-Specific Tuning
Of Lithography Simulation Tools,” Optical Microlithography X, Proc., SPIE Vol. 3051 (1997)
pp. 491-498.
51. C. A. Mack, “Resolution and Depth of Focus in Optical Lithography,” Microlithographic
Techniques in IC Fabrication, Proc., SPIE Vol. 3183 (1997) pp. 14-27.
52. C. A. Mack, “Electron Beam Lithography Simulation for Mask Making, Part I,” 17th Annual
BACUS Symposium on Photomask Technology and Management, Proc., SPIE Vol. 3236
(1997) pp. 216-227.
53. C. Sauer, D. Alexander and C. A. Mack, “Electron Beam Lithography Simulation for Mask
Making, Part II: Comparison of the Lithographic Performance of PBS and EBR900-M1,”
17th Annual BACUS Symposium on Photomask Technology and Management, Proc.,
SPIE Vol. 3236 (1997) pp. 413-423.
54. R. F. Hollman and C. A. Mack, “Accuracy of 3-D Optical Lithography Simulation for
Advanced Reticles,” 17th Annual BACUS Symposium on Photomask Technology and
Management, Proc., SPIE Vol. 3236 (1997) pp. 424-429.
55. G. Arthur, C. A. Mack, and B. Martin, “A New Development Model for Lithography
Simulation,” Olin Microlithography Seminar Interface ‘97, Proc., (1997) pp. 55-66.
56. C. A. Mack, M. J. Maslow, R. Carpio, and A. Sekiguchi, “Impact of Developer Temperature
on Dissolution Behavior,” Olin Microlithography Seminar, Interface ‘97, Proc., (1997) pp.
203-212.
57. R. R. Dammel, J. P. Sagan, E. Kokinda, N. Eilbeck, C. A. Mack, G. G. Arthur, C. L.
Henderson, S. A. Scheer, B. M. Rathsack, and C. G. Willson “Improved Simulation of
Photoresists Using New Development Models,” Advances in Resist Technology and
Processing XV, Proc., SPIE Vol. 3333 (1998) pp. 401-416.
58. C. A. Mack, M. J. Maslow, R. Carpio, and A. Sekiguchi “New Model for the Effect of
Developer Temperature on Photoresist Dissolution,” Advances in Resist Technology and
Processing XV, Proc., SPIE Vol. 3333 (1998) pp. 1218-1231.
59. R. Gordon and C. A. Mack, “Lithography Simulation Employing Rigorous Solutions to
Maxwell’s Equations at the Mask,” Optical Microlithography XI, Proc., SPIE Vol. 3334
(1998) pp. 176-196.
60. J. Oey, P. Mack, and C. A. Mack, “Metal Layer Process Characterization: Statistical and
Computational Methods for Handling, Interpreting and Reacting to In-Line Critical
Dimension Information,” In-line Characterization Techniques for Performance and Yield
Enhancement in Microelectronic Manufacturing II, Proc., SPIE Vol. 3509 (1998) pp. 164178.
61. C. A. Mack, “Electron Beam Lithography Simulation for Mask Making, Part III: Effect of
Spot Size, Address Grid and Raster Writing Strategies on Lithography Performance with
PBS and ZEP-7000,” 18th Annual BACUS Symposium on Photomask Technology and
Management, Proc., SPIE Vol. 3546 (1998) pp. 32-44.
62. R. L. Gordon, C. A. Mack, J. S. Petersen, “Design and Analysis of Manufacturable
Alternating Phase-shifting Masks,” 18th Annual BACUS Symposium on Photomask
Technology and Management, Proc., SPIE Vol. 3546 (1998) pp. 606-616.
63. John S. Petersen, Martin McCallum, Nishrin Kachwala, Robert J. Socha, J. Fung Chen,
Thomas L. Laidig, Bruce W. Smith, Ronald L. Gordon, and Chris A. Mack, “Assessment of
a Hypothetical Roadmap That Extends Optical Lithography Through the 70-nm Technology
th
Node,” 18 Annual BACUS Symposium on Photomask Technology and Management,
Proc., SPIE Vol. 3546 (1998) pp. 288-303.
64. C. A. Mack, D. A. Legband, S. Jug, “Data Analysis for Photolithography” Micro- and NanoEngineering 98, Proc.
65. C. A. Mack, “Electron Beam Lithography Simulation for Mask Making” Micro- and NanoEngineering 98, Proc.
66. R. L. Gordon and C. A. Mack, “Mask Topography Simulation for EUV Lithography,”
Emerging Lithographic Technologies III, Proc., SPIE Vol. 3676 (1999) pp. 283-297.
67. C. A. Mack, S. Jug, D. A. Legband, “Data Analysis for Photolithography,” Metrology,
Inspection, and Process Control for Microlithography XIII, Proc., SPIE Vol. 3677 (1999) pp.
415-434.
68. A. Sekiguchi, C. A. Mack, M. Isono, T. Matsuzawa, “Measurement of Parameters for
Simulation of Deep UV Lithography Using a FT-IR Baking System,” Advances in Resist
Technology and Processing XVI, Proc., SPIE Vol. 3678 (1999) pp. 985-1000.
69. M. J. Maslow, C. A. Mack, J. Byers, “Effect of Developer Temperature and Normality on
Chemically Amplified Photoresist Dissolution,” Advances in Resist Technology and
Processing XVI, Proc., SPIE Vol. 3678 (1999) pp. 1001-1011.
70. T. H. Fedynyshyn, S. P. Doran, and C. A. Mack, “A FT-IR Method to Determine Dill’s C
Parameter for DNQ/Novolac Resists with E-beam and I-line Exposure,” Advances in Resist
Technology and Processing XVI, Proc., SPIE Vol. 3678 (1999) pp. 1263-1272.
71. J. Sturtevant, B. Ho, K. Lucas, J. Petersen, C. A. Mack, E. Charrier, B. Peterson, N.
Koshiba, G. Barnes, “Considerations for the Use of Application-Specific Photoresists,”
Advances in Resist Technology and Processing XVI, Proc., SPIE Vol. 3678 (1999) pp. 402410.
72. C. A. Mack, M. Ercken, M. Moelants, “Matching Simulation and Experiment for Chemically
Amplified Resists,” Optical Microlithography XII, Proc., SPIE Vol. 3679 (1999) pp. 183-192.
73. F. M. Schellenberg, V. Boksha, N. Cobb, J. C. Lai, C. H. Chen, C. A. Mack, “Impact of
Mask Errors on Full Chip Error Budgets,” Optical Microlithography XII, Proc., SPIE Vol.
3679 (1999) pp. 261-276.
74. C. A. Mack, M. J. Maslow, J. Byers, “Effect of Developer Temperature and Normality on
Conventional and Chemically Amplified Photoresist Dissolution,” Lithography for
Semiconductor Manufacturing, Proc., SPIE Vol. 3741 (1999) pp. 148-160.
75. C. Sauer and C. A. Mack, “Electron Beam Lithography Simulation for Mask Making, Part
IV: Effect of Resist Contrast on Isofocal Dose,” Photomask and X-Ray Mask Technology
VI, Proc., SPIE Vol. 3748 (1999) pp. 27-40.
76. C. A. Mack and C. Sauer, “Electron Beam Lithography Simulation for Mask Making, Part V:
Impact of GHOST proximity effect correction on process window,” 19th Annual BACUS
Symposium on Photomask Technology and Management, Proc., SPIE Vol. 3873 (1999)
pp. 2-20.
77. F. M. Schellenberg and C. A. Mack, “MEEF in Theory and Practice,” 19th Annual BACUS
Symposium on Photomask Technology and Management, Proc., SPIE Vol. 3873 (1999)
pp. 189-202.
78. C. A. Mack and F. M. Schellenberg, “Impact of Mask Errors on Optical Lithography,” Arch
Microlithography Symposium, Interface ‘99, Proc., (1999) pp. 75-84, and Yield
Management Solutions, Spring 2000, pp. 58-62.
79. C. A. Mack, “Modeling of Projection Electron Lithography”, Emerging Lithographic
Technologies IV, Proc., SPIE Vol. 3997 (2000) pp. 245-254.
80. A. Kroyan, J. Bendik, O. Semprez, N. Farrar, C. Rowan, C. A. Mack, “Modeling the Effects
of Excimer Laser Bandwidths on Lithographic Performance”, Optical Microlithography XIII,
Proc., SPIE Vol. 4000 (2000) pp. 658-664.
81. C. A. Mack, “Analytic Approach to Understanding the Impact of Mask Errors on Optical
Lithography”, Optical Microlithography XIII, Proc., SPIE Vol. 4000 (2000) pp. 215-227.
82. A. Sekiguchi, M. Kadoi, Y. Miyake, T. Matsuzawa, and C. A. Mack, “Development of
Analysis System for F2-Excimer Laser Photochemical Processes,” Advances in Resist
Technology and Processing XVII, Proc., SPIE Vol. 3999 (2000) pp. 395-412.
83. S. Weaver, M. Lu, J. Chabala, D. Ton, C. Sauer, and C. A. Mack, “Lithography
Performance of Contact Holes - Part I: Optimization of Pattern Fidelity Using MPG and
MPG-II,” Photomask and X-Ray Mask Technology VII, Proc., SPIE Vol. 4066 (2000) pp.
160-171.
84. C. A. Mack, C. Sauer, S. Weaver, and J. Chabala, “Lithography Performance of Contact
Holes - Part II: Simulation of the Effects of Reticle Corner Rounding on Wafer Print
Performance,” Photomask and X-Ray Mask Technology VII, Proc., SPIE Vol. 4066 (2000)
pp. 172-179.
85. I. Yu. Kuzmin and C. A. Mack, “Comprehensive Simulation of E-beam Lithography
Processes Using PROLITH/3D and Temptation Software Tools,” 20th Annual BACUS
Symposium on Photomask Technology, Proc., SPIE Vol. 4186 (2000) pp. 503-507.
86. M. D. Levenson, J. S. Petersen, D. G. Gerold, C. A. Mack, “Phase Phirst! An Improved
Strong-PSM Paradigm,” 20th Annual BACUS Symposium on Photomask Technology,
Proc., SPIE Vol. 4186 (2000) pp. 395-404.
87. C. A. Mack, “Impact of Reticle Corner Rounding on Wafer Print Performance,” Arch
Microlithography Symposium, Interface 2000, Proc., (2000) pp. 91-101.
88. C. A. Mack, “Corner Rounding and Line-end Shortening in Optical Lithography,”
Microlithographic Techniques in Integrated Circuit Fabrication II, Proc., SPIE Vol. 4226
(2000) pp. 83-92.
89. M. Pochkowski, C. A. Mack, and B. S. Kasprowicz, “Application of Critical Shape Analyses
to Two Dimensional Patterns,” Metrology, Inspection and Process Control XV, Proc., SPIE
Vol. 4344 (2001) pp. 169-176.
90. C. A. Mack, S. Jug, R. Jones, P. Apte, S. Williams, and M. Pochkowski, “Metrology and
Analysis of Two Dimensional SEM Patterns,” Metrology, Inspection and Process Control
XV, Proc., SPIE Vol. 4344 (2001) pp. 377-384.
91. J. Allgair, M. Ivy, K. Lucas, J. Sturtevant, R. Elliott, C. A. Mack, C. MacNaughton, J. Miller,
M. Pochkowski, M. Preil, J. Robinson, and F. Santos, “Characterization of Optical Proximity
Correction Features,” Metrology, Inspection and Process Control XV, Proc., SPIE Vol.
4344 (2001) pp.200-207.
92. M. D. Smith and C. A. Mack, “Examination of a simplified reaction-diffusion model for post
exposure bake of chemically amplified resists,” Advances in Resist Technology and
Processing XVIII, Proc., SPIE Vol. 4345 (2001) pp.1022-1036.
93. M. D. Smith, C. A. Mack, and J. S. Petersen, “Modeling the impact of thermal history during
post exposure bake on the lithographic performance of chemically amplified resists,”
Advances in Resist Technology and Processing XVIII, Proc., SPIE Vol. 4345 (2001)
pp.1013-1021.
94. G. M. Schmid, M. D. Smith, C. A. Mack, V. K. Singh, S. D. Burns, and C. G. Willson,
“Understanding Molecular Level Effects During Post Exposure Processing,” Advances in
Resist Technology and Processing XVIII, Proc., SPIE Vol. 4345 (2001) pp.1037-1047.
95. Z. M. Ma and C. A. Mack, “Impact of Illumination Coherence and Polarization on the
Imaging of Attenuated Phase Shift Masks”, Optical Microlithography XIV, Proc., SPIE Vol.
4346 (2001) pp. 1522-1532.
96. Will Conley, Cesar Garza, Mircea Dusa, Robert Socha, Joseph Bendik, and Chris A. Mack,
"The MEEF Shall Inherit the Earth," Optical Microlithography XIV, Proc., SPIE Vol. 4346
(2001) pp. 251-258.
97. S. Jug, R. Huang, J. Byers, C. A. Mack, “Automatic Calibration of Lithography Simulation
Parameters,” Lithography for Semiconductor Manufacturing, Proc., SPIE Vol. 4404 (2001).
98. M. E. Preil and C. A. Mack, “Measurement and Analysis of Reticle and Wafer Level
Contributions to Total CD Variation,” Lithography for Semiconductor Manufacturing, Proc.,
SPIE Vol. 4404 (2001) pp. 144-152.
99. S. Robertson, C. A. Mack, and M. Maslow “Towards a Universal Resist Dissolution Model
for Lithography Simulation,” Lithography for Semiconductor Manufacturing, Proc., SPIE
Vol. 4404 (2001) pp. 111-122.
100. C. A. Mack, “Electron Beam Lithography Simulation for Mask Making, Part VI: Comparison
of 10 and 50 kV GHOST Proximity Effect Correction,” Photomask and X-Ray Mask
Technology VIII, Proc., SPIE Vol. 4409 (2001) pp. 194-203.
101. Sergey Babin, Igor Yu. Kuzmin and Chris A. Mack, “Comprehensive Simulation of
Electron-beam Lithography Processes Using PROLITH 3/D and TEMPTATION Software
Tools,” Micro- and Nano-Engineering 2001, Proc.
102. J. Byers, C. Mack, R. Huang, S. Jug, “Automatic Calibration of Lithography Simulation
Parameters Using Multiple Data Sets,” Micro- and Nano-Engineering 2001, Proc.
103. C. A. Mack, “Impact of Graybeam Method of Virtual Address Reduction on Image Quality,”
21st Annual BACUS Symposium on Photomask Technology, Proc., SPIE Vol. 4562 (2001)
pp. 537-544.
104. P. Rhyins, M. Fritze, D. Chan, C Carney, B.A Blachowicz, M. Vieira, C. Mack,
“Characterization of Quartz Etched PSM Masks for KrF Lithography at the 100 nm Node,”
21st Annual BACUS Symposium on Photomask Technology, Proc., SPIE Vol. 4562 (2001)
pp. 486-495.
105. Stewart A. Robertson, Doris Kang, Steven D. Tye, Steven G. Hansen, Anita Fumar-Pici,
Tsann-Bim Chiou, Jeffery D. Byers, Chris A. Mack, and Mark D. Smith, “Calibration of
ESCAP Resist Simulation Parameters from Consideration of Printed CD Pitch Bias, CD
Measurement Offset and Wafer Thermal History,” Advances in Resist Technology and
Processing XIX, Proc., SPIE Vol. 4690 (2002) pp.952-962.
106. C. A. Mack, “Theoretical Analysis of the Potential for Maskless Lithography,” Optical
Microlithography XV, Proc., SPIE Vol. 4691 (2002) pp. 98-106.
107. Robert Jones, Chris A. Mack, and Jeffrey Byers, “Etch Simulations for Lithography
Engineers,” Optical Microlithography XV, Proc., SPIE Vol. 4691 (2002) pp. 1232-1242.
108. Mark D. Smith, Jeffrey D. Byers, Chris A. Mack, “A Comparison Between the Process
Windows Calculated with Full and Simplified Resist Models,” Optical Microlithography XV,
Proc., SPIE Vol. 4691 (2002) pp. 1199-1210.
109. Jeffrey D. Byers, Mark D. Smith, and Chris A. Mack, “3D Lumped Parameter Model for
Lithographic Simulations,” Optical Microlithography XV, Proc., SPIE Vol. 4691 (2002)
pp.125-137.
110. C. A. Mack, “Characterizing the Process Window of a Double Exposure Dark Field
Alternating Phase Shift Mask,” Design, Process Integration, and Characterization for
Microelectronics, Proc, SPIE Vol. 4692 (2002) pp. 454-464.
111. Dan Bald, Saghir Munir, Barry Lieberman, William H. Howard, Chris A. Mack,
“PRIMADONNA: A System for Automated Defect Disposition of Production Masks Using
Wafer Lithography Simulation,” 22nd Annual BACUS Symposium on Photomask
Technology, Proc., SPIE Vol. 4889 (2002) pp. 263-270.
112. C. A. Mack, “Measuring and Modeling Flare in Optical Lithography,” Arch Microlithography
Symposium, Interface 2002, Proc. (2002).
113. Chris A. Mack and Jeffrey D. Byers, “Improved Model for Focus-Exposure Data Analysis,”
Metrology, Inspection and Process Control XVII, Proc., SPIE Vol. 5038 (2003) pp. 396-405.
114. Jeffrey D. Byers, Mark D. Smith, Chris A. Mack, and John Biafore, “Modeling Soft Bake
Effects in Chemically Amplified Resists,” Advances in Resist Technology and Processing
XX, Proc., SPIE Vol. 5039 (2003) pp. 1143-1154.
115. Mark D. Smith and Chris A. Mack, “Process Sensitivity and Optimization with Full and
Simplified Resist Models,” Optical Microlithography XVI, Proc., SPIE Vol. 5040 (2003)
pp.1509-1520.
116. Mark D. Smith and Chris A. Mack, “Methods for Benchmarking Photolithography
Simulators,” Optical Microlithography XVI, Proc., SPIE Vol. 5040 (2003) pp. 57-68.
117. C. A. Mack, “Measuring and Modeling Flare in Optical Lithography,” Optical
Microlithography XVI, Proc., SPIE Vol. 5040 (2003) pp. 151-161.
118. M. D. Smith, J. D. Byers, and C. A. Mack, “The Lithographic Impact of Resist Model
Parameters,” Advances in Resist Technology and Processing XXI, Proc., SPIE Vol. 5376
(2004) pp. 322-332.
119. C. A. Mack and J. D. Byers, “Exploring the Capabilities of Immersion Lithography Through
Simulation,” Optical Microlithography XVII, Proc., SPIE Vol. 5377 (2004) pp. 428-441.
120. M. D. Smith, J. D. Byers, and C. A. Mack, “Methods for Benchmarking Photolithography
Simulators, Part II,” Optical Microlithography XVII, Proc., SPIE Vol. 5377 (2004) pp.14751486.
121. J. D. Byers, M. D. Smith, and C. A. Mack, “Lumped Parameter Model for Chemically
Amplified Resists,” Optical Microlithography XVII, Proc., SPIE Vol. 5377 (2004) pp. 14621474.
122. M. D. Smith, J. D. Byers, and C. A. Mack, “The Impact of Mask Topography on Binary
Reticles at the 65nm Node,” 24th Annual BACUS Symposium on Photomask Technology,
Proc., SPIE Vol. 5567-45 (2004) pp. 416-424.
123. Chris A. Mack, ”Lithography Simulation in Semiconductor Manufacturing,” Photonics Asia,
Advanced Microlithography Technologies, Proc., SPIE Vol. 5645 (2004) pp. 63-83.
124. Mark D. Smith, Trey Graves, Jeffrey D. Byers, Chris A. Mack, “Methods for Benchmarking
Photolithography Simulators: Part III,” Optical Microlithography XVIII, Proc., SPIE Vol.
5754-99 (2005).
125. Mark D. Smith, Trey Graves, Jeffrey D. Byers, Chris A. Mack, “The Impact of Mask
Topography on Binary Reticles at the 65nm Node,” Optical Microlithography XVIII, Proc.,
SPIE Vol. 5754-49 (2005).
126. Chris A. Mack, “The Causes of Horizontal-Vertical (H-V) Bias in Optical Lithography,”
FujiFilm Microlithography Symposium, Interface 2005, Proc., (2005).
127. Chris A. Mack, Mark D. Smith, Trey Graves, “The impact of attenuated phase shift mask
topography on hyper-NA lithography,” 25th Annual BACUS Symposium on Photomask
Technology, Proc., SPIE Vol. 5992 (2005).
128. Trey Graves, Mark D. Smith, Chris A. Mack, “Methods for Benchmarking Photolithography
Simulators: Part IV,” Optical Microlithography XIX, Proc., SPIE Vol. 6154 (2006).
129. P. Yu, D. Z. Pan, C. A. Mack, “Fast lithography simulation under focus variations for OPC
and layout optimizations," Design and Process Integration for Microelectronic
Manufacturing IV, Proc., SPIE Vol. 6156, (2006).
130. C. A. Mack, D. Harrison, C. Rivas, and P. Walsh, “Impact of thin film metrology on the
lithographic performance of 193nm bottom antireflective coatings”, Metrology, Inspection,
and Process Control for Microlithography XXI, Proc., SPIE Vol. 6518 (2007).
131. John J. Biafore, Chris A. Mack, Stewart A. Robertson, Mark D. Smith, and Sanjay Kapasi,
“The Causes of Horizontal-Vertical (H-V) Bias in Optical Lithography: Dipole Source
Errors”, Optical Microlithography XX, Proc., SPIE Vol. 6520 (2007).
132. C. A. Mack, “Improved Methods for Lithography Model Calibration”, Photomask and NextGeneration Lithography Mask Technology XIV, Proc., SPIE Vol. 6607 (2007) p. 66071D.
133. S. Chauhan, M. Somervell, S. Scheer, C. Mack, R. T. Bonnecaze, and C. G. Willson,
“Polymer Dissolution Model: An Energy Adaptation of the Critical Ionization Theory,”
Advances in Resist Technology and Processing XXVI, Proc., SPIE Vol. 7273 (2009).
134. C. A. Mack, “Line-Edge Roughness and the Ultimate Limits of Lithography”, Advances in
Resist Technology and Processing XXVII, Proc., SPIE Vol. 7639 (2010), p. 763931.
135. Siddharth Chauhan, Mark Somervell, Michael Carcasi, Steven Scheer, Roger T.
Bonnecaze,, Chris Mack and C. Grant Willson, “Study of LER and Insoluble Particles
Generation during the Photoresist Dissolution using Mesoscale Modeling”, Advances in
Resist Technology and Processing XXVII, Proc., SPIE Vol. 7639 (2010) p. 763933.
136. C. A. Mack, “A New Fast Resist Model: the Gaussian LPM”, Design for Manufacturability
through Design-Process Integration V, Proc., SPIE Vol. 7974 (2011).
137. C. A. Mack, James W. Thackeray, John J. Biafore, and Mark D. Smith, “Stochastic
Exposure Kinetics of EUV Photoresists: A Simulation Study”, Extreme Ultraviolet (EUV)
Lithography II, Proc., SPIE Vol. 7969 (2011).
138. C. A. Mack, John J. Biafore, and Mark D. Smith, “Stochastic Acid-Base Quenching in
Chemically Amplified Photoresists: A Simulation Study”, Advances in Resist Technology
and Processing XXVIII, Proc., SPIE Vol. 7972 (2011).
Other Publications
“The Lithography Tutor” and “The Lithography Expert”, a quarterly column in Microlithography
World, 1993 – 2008.
http://sst.pennnet.com/extras/sst_lithoexpert.cfm
Regular columns in the Canon Submicron Focus newsletter, 1996 – 2005
http://www.canonusa.com/templatedata/semiconductor/sedcurrent.html
Regular columns in KLA-Tencor’s Yield Management Solutions Magazine, 2001 – 2006
http://www.kla-tencor.com/company/magazine.html
PROFESSIONAL REFERENCES
Grant Willson
Department of Chemical Engineering
The University of Texas at Austin
Austin, TX 78712
Phone: (512) 471-4342; Fax: (512) 471-7222
Email: willson@che.utexas.edu; http://willson.cm.utexas.edu
David Pan
Department of Electrical and Computer Engineering
Computer Engineering Research Center
The University of Texas at Austin
Austin, TX 78712
Phone: (512) 471-1436; Fax: (512) 471-8967
Email: dpan@ece.utexas.edu; http://www.ece.utexas.edu/~dpan
Edward Charrier
KLA-Tencor
8834 North Capital of Texas Hwy, suite 301
Austin, TX 78759
Phone: (512) 231-4223; Fax: (512) 327-1510
Email: edward.charrier@kla-tencor.com
Exhibit B
Calculus (Concepts & Contexts) by James Stewart
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