STC.UNM v. Intel Corporation
Filing
55
MEMORANDUM in Support re 54 MOTION to Compel filed by STC. UNM. (Attachments: # 1 Exhibit A, # 2 Exhibit B, # 3 Exhibit C, # 4 Exhibit D, # 5 Exhibit E, # 6 Exhibit F, # 7 Exhibit G, # 8 Exhibit H)(Pedersen, Steven)
STC.UNM v. Intel Corporation
Doc. 55 Att. 3
Exhibit C
Excerpts from LithoVision 2009, Lithography Technology Trends, S. Sivakumar
Dockets.Justia.com
Lithography Technology Trends
Sam Sivakumar Intel Corporation
1
ArF Pitch Division (PD)
Double Patterning Pitch Division (DPPD)
90 80
Spacer Based Pitch Division (SBPD)
Half Pitch (nm)
70 60 50 40 30 20 10 0 0.8 0.9 1
d = k1
NA
1.1
1.2
1.3
NA
ArF PD gains significant resolution at the expense of process complexity
11
Double Patterning Pitch Division
· Most mature double patterning methods are either LELE (Litho/Etch/Litho/Etch) or LFLE (Litho/Freeze/Litho/Etch)
Line DP can be either. Space DP has to be LELE
· Key challenges are process complexity and synthesis issues in splitting original pattern into two masks LFLE
Lithography - DP
Transfer to HM
Transfer to Substrate
12
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