STC.UNM v. Intel Corporation

Filing 55

MEMORANDUM in Support re 54 MOTION to Compel filed by STC. UNM. (Attachments: # 1 Exhibit A, # 2 Exhibit B, # 3 Exhibit C, # 4 Exhibit D, # 5 Exhibit E, # 6 Exhibit F, # 7 Exhibit G, # 8 Exhibit H)(Pedersen, Steven)

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STC.UNM v. Intel Corporation Doc. 55 Att. 3 Exhibit C Excerpts from LithoVision 2009, Lithography Technology Trends, S. Sivakumar Dockets.Justia.com Lithography Technology Trends Sam Sivakumar Intel Corporation 1 ArF Pitch Division (PD) Double Patterning Pitch Division (DPPD) 90 80 Spacer Based Pitch Division (SBPD) Half Pitch (nm) 70 60 50 40 30 20 10 0 0.8 0.9 1 d = k1 NA 1.1 1.2 1.3 NA ArF PD gains significant resolution at the expense of process complexity 11 Double Patterning Pitch Division · Most mature double patterning methods are either LELE (Litho/Etch/Litho/Etch) or LFLE (Litho/Freeze/Litho/Etch) ­ Line DP can be either. Space DP has to be LELE · Key challenges are process complexity and synthesis issues in splitting original pattern into two masks LFLE Lithography - DP Transfer to HM Transfer to Substrate 12

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