STC.UNM v. Intel Corporation

Filing 55

MEMORANDUM in Support re 54 MOTION to Compel filed by STC. UNM. (Attachments: # 1 Exhibit A, # 2 Exhibit B, # 3 Exhibit C, # 4 Exhibit D, # 5 Exhibit E, # 6 Exhibit F, # 7 Exhibit G, # 8 Exhibit H)(Pedersen, Steven)

STC.UNM v. Intel Corporation

Doc. 55 Att. 3

Exhibit C
Excerpts from LithoVision 2009, Lithography Technology Trends, S. Sivakumar

Dockets.Justia.com

Lithography Technology Trends
Sam Sivakumar Intel Corporation
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ArF Pitch Division (PD)
Double Patterning Pitch Division (DPPD)
90 80

Spacer Based Pitch Division (SBPD)

Half Pitch (nm)

70 60 50 40 30 20 10 0 0.8 0.9 1

d = k1

NA

1.1

1.2

1.3

NA

ArF PD gains significant resolution at the expense of process complexity

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Double Patterning Pitch Division
· Most mature double patterning methods are either LELE (Litho/Etch/Litho/Etch) or LFLE (Litho/Freeze/Litho/Etch)
­ Line DP can be either. Space DP has to be LELE

· Key challenges are process complexity and synthesis issues in splitting original pattern into two masks LFLE

Lithography - DP

Transfer to HM

Transfer to Substrate

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